▎ 摘　　要

NOVELTY - Transistor (11) comprises a source electrode (16), a drain electrode (17), and a gate electrode (15) whose gate length direction is the direction from the source electrode to the drain electrode, an insulating base portion having a first surface, a graphene film arranged on the first surface, and a strip-shaped shape extending in the gate width direction orthogonal to the gate length direction, a first insulating film (14) arranged on the second surface of the graphene film, which is a surface opposite to the surface facing the first surface and constituting the gate insulating film, a gate electrode has a band shape extending in the gate width direction and has a band shape, and is arranged on the third surface of the first insulating film, which is a surface opposite to the surface facing the second surface. USE - As transistor. ADVANTAGE - The transistor has stable operation and improved high frequency characteristics. DETAILED DESCRIPTION - Transistor (11) comprises a source electrode (16), a drain electrode (17), and a gate electrode (15) whose gate length direction is the direction from the source electrode to the drain electrode, an insulating base portion having a first surface, a graphene film arranged on the first surface, and a strip-shaped shape extending in the gate width direction orthogonal to the gate length direction, a first insulating film (14) arranged on the second surface of the graphene film, which is a surface opposite to the surface facing the first surface and constituting the gate insulating film, a gate electrode has a band shape extending in the gate width direction and has a band shape, and is arranged on the third surface of the first insulating film, which is a surface opposite to the surface facing the second surface, a source electrode is mounted on the base portion, comes into contact with the graphene film, and is arranged at a distance from the first insulating film in the gate length direction. The drain electrode is mounted on the base portion, comes into contact with the graphene film, and is spaced from the first insulating film in the gate length direction. The transistor is arranged on the side opposite to the source electrode with the first insulating film interposed between it, and the transistor is made of a material having a weaker bond with the graphene film than the first insulating film. In the first region located between the first insulating film and the source electrode and in the second region located between the first insulating film and the drain electrode. A second insulating film (21) covering the second surface. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the transistor. Transistor (11) Base (12) First side (12a) Graphene membrane (13) Second side (13a) Main surface (13b) First insulating film (14) Gate electrode (15) Source electrode (16) Drain electrode (17) Voids (18a, 18b) Second insulating film (21)