▎ 摘　　要

NOVELTY - The method comprises providing a flexible substrate, where the flexible substrate is fixed on a substrate, forming a gate on the substrate by means of thermal evaporation, sequentially forming a layer of Ti nucleation layer and HfO2 gate dielectric layer on the gate using the method of atomic layer deposition (ALD) coating, utilizing the seal method to transfer graphene on the HfO2 gate dielectric layer to obtain a graphene layer, preparing the source electrode and the drain electrode on the graphene layer by means of mask lithography, forming a coating layer on the graphene layer by using the method of ALD coating, peeling off the substrate obtained in the preparation step of the cladding layer from the substrate, obtaining a graphene field effect transistor, and connecting the gate on the graphene field effect transistors to the drain on the other graphene field effect transistor. USE - Method for preparing graphene field effect transistor integrated device. ADVANTAGE - The method overcomes the problem of non-uniform performance of the existing graphene field effect transistor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene field effect transistor integrated device prepared by the above mentioned method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for preparing graphene field effect transistor integrated device (Drawing includes non-English language text).