▎ 摘　　要

NOVELTY - Manufacture of graphene precursor-containing silicon carbide substrate involves forming a graphene precursor by heating a silicon carbide substrate such that silicon atoms in the silicon carbide plane of the surface of the substrate is sublimed, stopping the heating before the graphene precursor becomes fully covered with graphene, treating the substrate to form molecular layers, forming a structure in which a molecular layer having two dangling bonds of carbon atom is provided closer to the surface side as compared with a molecular layer having one dangling bond of carbon atom. USE - Manufacture of graphene precursor-containing silicon carbide substrate (claimed). ADVANTAGE - The method enables efficient and simple manufacture of graphene precursor-containing silicon carbide substrate with high productivity in short period of time. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) determination of process conditions of graphene precursor formation process; (2) surface-treatment method of silicon carbide substrate; and (3) determination of structure of silicon carbide substrate.