• 专利标题:   Organic electrode with stable water-oxygen useful in preparation of electrochemical energy storage devices, comprises n-type organic semiconductor material with lowest unoccupied molecular orbital energy level and n-type doping agent.
  • 专利号:   CN113410066-A, CN113410066-B
  • 发明人:   ZHANG H, ZHAO M, MA W
  • 专利权人:   UNIV SOUTH CHINA TECHNOLOGY
  • 国际专利分类:   H01G011/30, H01G011/86, H01M004/04, H01M004/60
  • 专利详细信息:   CN113410066-A 17 Sep 2021 H01G-011/30 202184 Pages: 9 Chinese
  • 申请详细信息:   CN113410066-A CN10644798 09 Jun 2021
  • 优先权号:   CN10644798

▎ 摘  要

NOVELTY - Organic electrode with stable water oxygen comprises n-type organic semiconductor material with lowest unoccupied molecular orbital (LUMO) energy level ≮ -3.6 eV and n-type doping agent with highest occupied molecular orbital (HOMO) energy level more than -3.6 eV. The n-type organic semiconductor material with the LUMO energy level ≮ -3.6eV is obtained by electrochemical in-situ polymerization of monomer benzothiadiazole carbazole, anthraquinone carbazole, or anthraquinone tricarbazole. The n-type dopant with HOMO energy level higher than -3.6 eV is a bis(cyclopentadienyl) cobalt (II) complex, bis(pentamethylcyclopentadienyl) cobalt(II) complex, binuclear terpyridine ruthenium (II) complex, or 4-(1,3-dimethyl-2,3-dihydro-1H-benzodimidazol-2-yl)-N,N-dimethylaniline. USE - The electrode is useful in preparation of electrochemical energy storage devices (claimed). ADVANTAGE - The n-type dopant with low ionization energy can effectively capture the electron trap formed by residual water oxygen in the solvent to inactivate, avoiding the capturing electrode material generated in the working free electron, and finally can improve the stability of the electrode material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of water-oxygen stable organic electrode.