• 专利标题:   Single-layer graphene film based composite structure for e.g. light-emitting diode comprises single-layer graphene film and single layer graphene film surface of vertical nano-line array.
  • 专利号:   CN106449133-A
  • 发明人:   WANG J
  • 专利权人:   QUANPU PHOTOELECTRIC TECHNOLOGY SHANGHAI
  • 国际专利分类:   B01J021/18, H01G011/26, H01G011/36, H01L031/0224, H01L033/40
  • 专利详细信息:   CN106449133-A 22 Feb 2017 H01G-011/26 201723 Pages: 11 Chinese
  • 申请详细信息:   CN106449133-A CN10879181 08 Oct 2016
  • 优先权号:   CN10879181

▎ 摘  要

NOVELTY - Single-layer graphene film based composite structure comprises single-layer graphene film and single layer graphene film surface of vertical nano-line array. The vertical nanoline array comprises at least two layers of nano line sub array, at least top two layers of nano line sub array is not same, and same layer of nanowires sub array of nanowire top height is same, vertical nano-line array has high and low fluctuation of top. USE - Single-layer graphene film based composite structure for light-emitting diode, solar battery, photocatalysis and sensors (all claimed). ADVANTAGE - The single-layer graphene film based composite structure has fast carrier mobility, high specific surface area, improves charging and discharging unit time, and increases charge storage capacity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of composite structure comprising preparing single layer graphene film, dividing each nano line sub array area in single layer graphene film surface, and forming mask layer on single-layer graphene film: etching mask film layer of nano line sub array area removing desired growth on, and keeping other regions of mask; growing single layer of exposed graphene film on surface of nanowire sub array; and repeating etching and growing until finishing all nanowire prepared sub array single layer graphene film surface. The layer of nano line sub array with layer of nano line sub array firstly grown is higher after growth.