▎ 摘　　要

NOVELTY - The method involves processing a metal electrode and cooling to obtain a stretchable electrode-coated substrate, after heating the flexible substrate. A graphene is grown on copper foil and prepared by chemical vapor deposition. The graphene grown on the back of the copper foil is retained. The copper foil is etched to make a graphene roll. Multiple layers of the graphene roll are transferred and stacked on the substrate as a semiconductor layer. The stretchable transistor is constructed. The number of repetitions is 3 times until three layers of the graphene roll are transferred. USE - Method for manufacturing stretchable transistor (claimed). ADVANTAGE - By using graphene the need for back-side etching is eliminated. The tensile properties and transparency of the stretchable transistor are improved. The use space of the stretchable transistor is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a stretchable transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the polydimethylsiloxane coated with metal electrodes of stretchable transistor.