• 专利标题:   Dual-band tunable room temperature infrared photoelectric detector for e.g. remote sensing has source/drain electrode and graphene for collecting graphene and negative charge after receiving infrared light signal, and forming current.
  • 专利号:   CN114300569-A
  • 发明人:   YE J, CAI J, WU W, LI S, LIN L, CHEN J, GUO J
  • 专利权人:   UNIV CHENGDU
  • 国际专利分类:   H01L031/0224, H01L031/113
  • 专利详细信息:   CN114300569-A 08 Apr 2022 H01L-031/113 202250 Chinese
  • 申请详细信息:   CN114300569-A CN11624685 28 Dec 2021
  • 优先权号:   CN11624685

▎ 摘  要

NOVELTY - The dual-band tunable room temperature infrared photoelectric detector comprises lead, source/drain electrode (1), graphene (3), bottom electrode film (4) and ferroelectric film (5). The top of source/drain electrode is a metal electrode for receiving detected infrared light signal. The source/drain electrode and graphene are for collecting graphene and negative charge generated after receiving infrared light signal, and forming a source/drain current through a connecting wire. USE - Dual-band tunable room temperature infrared photoelectric detector used in early warning, remote sensing and aerospace fields. ADVANTAGE - The double-band tunable room temperature infrared photoelectric detector can be with the substrate to Van der Waals force contact without considering the lattice matching problem, without complex epitaxial growth process, which greatly reduces the production cost. The damage to the material and the generation of the unsmooth edge in the process of graphene processing are avoided. The process of processing is simplified. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of the structure of a dual-band tunable room temperature infrared photoelectric detector. Source/drain electrode (1) Graphene (2) Substrate (3) Bottom electrode film (4) Ferroelectric film (5)