▎ 摘　　要

NOVELTY - Manufacture of beta -gallium trioxide thin film layer involves forming a sacrificial layer on a carrier substrate, forming a graphene layer by growing graphene on a metal foil and separating the graphene layer from the metal foil using a metal etchant, transferring and stacking the separated graphene layer onto the sacrificial layer, transferring beta -gallium trioxide nano-flake seeds onto the graphene layer by taping method, and forming beta -gallium trioxide thin film layer by growing beta -gallium trioxide via beta -gallium trioxide nano-flake seeds on the graphene layer. USE - Manufacture of beta -gallium trioxide thin film layer used for semiconductor device. ADVANTAGE - The method enables economical manufacture of beta -gallium trioxide thin film layer having excellent electrical property, thermal property and breakdown voltage characteristics.