▎ 摘　　要

NOVELTY - Preparing step-regulated graphene sapphire wafer involves pretreatment of the sapphire wafer, placing pretreated sapphire substrate in a graphite plate, heating by electromagnetic induction, pumping the pressure to 10 pascal, and the growth pressure, growth temperature and growth time are set. The argon gas is introduced when the temperature rises to 200-500℃, and introduced hydrogen when the temperature continues to rise to 600-800℃, and a growth gas is introduced when the temperature is raised to the growth temperature. The growth is over, stop feeding the growth gas, dropped the temperature in an argon and hydrogen environment, turn off the hydrogen when the temperature is lower than 500℃, and turn off the hydrogen when the temperature is lower than 100℃. The argon gas is turned off, and performed vacuum breaking treatment to obtain the graphene sapphire wafer. USE - Method for preparing step-regulated graphene sapphire wafer. ADVANTAGE - The method provides high quality graphene sapphire wafer of one-step preparation method. The method controls the growth of high quality graphite the alkene under the very high temperature condition.