• 专利标题:   Graphene FET micro-zone heating method, involves regulating rear gate voltage to modulate edge micro-structure, and performing high-temperature narrow edge micro-structure heating process at temperature of about specific degrees centigrade.
  • 专利号:   CN103839835-A
  • 发明人:   WANG H, XIE X, WU T, XIE H, CHEN J, DENG L, LIU X, SUN Q, ZHANG X
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   B82Y040/00, H01L021/336
  • 专利详细信息:   CN103839835-A 04 Jun 2014 H01L-021/336 201450 Pages: 14 Chinese
  • 申请详细信息:   CN103839835-A CN10114348 25 Mar 2014
  • 优先权号:   CN10114348

▎ 摘  要

NOVELTY - The method involves preparing a FET. A graphite unit is provided with a narrow edge micro-structure. A rear part of the FET is fixed with a rear gate. A voltage source or electric current source is applied between two ends of a graphite electrode. Rear gate voltage is regulated to modulate the narrow edge micro-structure. High-temperature narrow edge micro-structure heating process is performed at temperature of about 100-1200 degrees centigrade. Graphite alkene is formed as a snake-shaped or hollow dumbbell-shaped structure. Hydrogen (H2) gas is heated to maintain methane (CH4). USE - Graphene FET micro-zone heating method. ADVANTAGE - The method enables realizing graphene FET micro-zone heating process in an efficient manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene FET micro-zone heating structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene FET micro-zone heating method.'(Drawing includes non-English language text)'