• 专利标题:   Preparing three dimensional net-shaped silicon carbide nanowire used in e.g. national defense military industry, involves mixing polymolybdenumcarbosilane vinyltriethoxysilane-graphene oxide powder or poly(N vinylguanidine powder, pore forming agent powder, and cracking.
  • 专利号:   CN116143524-A
  • 发明人:   ZHAN J, TAO Q, MAO S, ZHENG Y, WANG Y, LIANG J, HUANG W, YAO R
  • 专利权人:   UNIV XIAMEN
  • 国际专利分类:   C04B035/577, C04B035/622, C04B035/80, C04B038/06, D01F009/08
  • 专利详细信息:   CN116143524-A 23 May 2023 C04B-035/577 202354 Chinese
  • 申请详细信息:   CN116143524-A CN10164950 24 Feb 2023
  • 优先权号:   CN10164950

▎ 摘  要

NOVELTY - Preparing three-dimensional net-shaped silicon carbide nano-wire comprises mixing polymolybdenumcarbosilane-vinyltriethoxysilane-graphene oxide (PMVG) powder or poly(N-vinylguanidine (PVG) powder with silicone carbide ceramic powder, placing mixed powder raw blank in crucible with cover, cracking at high temperature and pore-forming to obtain 3D mesh-shaped silica nanowires, or mixing PMVG powder or PVG powder with silica ceramic powder with pore forming agent powder, and placing mixture raw blank into crucible containing cover, and cracking to obtain final product. USE - The three-dimensional net-shaped silicon carbide nano-wire is useful for enhancing ceramic base, resin-based advanced composite material, improving composite material matrix internal micron scale defect, enhancing interface connection, and improving mechanical property of multi-level reinforced composite material. ADVANTAGE - The method provides a high yield, high temperature resistance, three anti-oxidant net-shaped silicon carbide nanowire. The method is simple and economical. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a three-dimensional net-shaped silicon carbide nano-wire.