▎ 摘　　要

NOVELTY - Preparing graphene film comprises cutting silicon (Si) substrate having inches of 4-12 and then cleaning, putting the cleaned substrate into chemical vapor deposition system reaction chamber, growing carbon layer on the substrate, introducing propane (C3H8) and silicon tetrahydride (SiH4), carrying out 3C-silicon carbide (SiC) thin film heterogeneity epitaxial growth, depositing a layer of the 3C-SiC film on the surface of the substrate using plasma enhanced chemical vapor deposition method, and coating SiO2 mask layer on photoresist layer. USE - The graphene film is useful as conductive channel for manufacturing high mobility of the graphene transistor. ADVANTAGE - The method simply produces graphene film with high safety. DETAILED DESCRIPTION - Preparing graphene film comprises (1) cutting silicon (Si) substrate having inches of 4-12 and then cleaning, (2) putting the cleaned substrate into chemical vapor deposition system reaction chamber having a vacuum pressure of 10-7 mbar, (3) gradually raising reaction chamber carbonization temperature at 900 degrees C to -1200 degrees C under a protection of hydrogen gas (H2), growing carbon layer on the substrate for 5-10 minutes, (4) raising the reaction chamber temperature to 1200 degrees C to -1300 degrees C and then introducing propane (C3H8) and silicon tetrahydride (SiH4), where the flow rate of C3H8 is 30 sccm, carrying out 3C-silicon carbide (SiC) thin film heterogeneity epitaxial growth, where the growth time is 30-60 minutes, gradually reducing the temperature to room temperature under a protection of H2 to obtain 3C growth of SiC thin film, (5) depositing a layer of the 3C-SiC film on the surface of the substrate using plasma enhanced chemical vapor deposition method to obtain silicon dioxide (SiO2) mask layer having a thickness of 0.4-1.2 mu m, (6) coating SiO2 mask layer on photoresist layer, and carving the needed device manufacture of the substrate with same shape on the mask to expose 3C-SiC window image, (7) setting patterned wafer in a quartz tube and then heating to 700-1100 degrees C, (8) introducing argon gas and mixed gas of chlorine into the quartz tube, and reacting chlorine and 3C-SiC for 3-5 minutes to form a single carbon film, (9) mixing the carbon film in hydrofluoric acid solution as a buffer to remove the outside image of SiO2, (10) depositing nickel film having a thickness of 300-500 nm on the carbon film, (11) placing the deposition of Ni film having a flow rate of 30-90 sccm into argon gas and the annealing at 900-1100 degrees C for 15-30 minutes when temperature of the carbon film recomposed of graphic graphene in image position, and (12) patterning the graphene of hydrochloride and copper sulfate in the mixed solution to remove Ni film.