▎ 摘　　要

NOVELTY - Growing nitride comprises preparing a substrate, manufacturing a graphene buffer layer on the substrate, patterning the graphene buffer layer to obtain a patterned graphene buffer layer, and growing a nitride on the patterned graphene buffer layer to obtain the grown nitride. USE - The method is useful for growing nitride. ADVANTAGE - The method can greatly relieve stress, the patterned graphene can ensure that the exposed substrate plays a good role in regulating and controlling the epitaxially grown nitride and obtains epitaxial materials with better crystal quality, solves the problem of large lattice mismatch of nitride heteroepitaxial, and reduces the reliability problem of the device.