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  • 专利标题:   Low temperature chemical vapor deposition for graphene film involves doping surface of a flat metal substrate with a chemical agent in a protective atmosphere, annealing while substrate is in contact with carbon source, heating and cooling.
  • 专利号:   CN103184425-A, CN103184425-B
  • 发明人:   HUANG M
  • 专利权人:   WUXI GEFEI ELECTRONIC THIN FILMS TECHNOL, WUXI GRAPHENE FILM CO LTD
  • 国际专利分类:   C23C016/02, C23C016/26, C30B025/00, C30B029/02
  • 专利详细信息:   CN103184425-A 03 Jul 2013 C23C-016/02 201377 Pages: 9 Chinese
  • 申请详细信息:   CN103184425-A CN10080856 13 Mar 2013
  • 优先权号:   CN10080856

▎ 摘　　要

NOVELTY - A low temperature chemical vapor deposition process involves doping the surface of a flat metal substrate with a chemical agent in a protective atmosphere, annealing treatment where the metal substrate is in contact with a carbon source, heating to react, obtaining the graphene thin film, cooling to room temperature. USE - Low temperature chemical vapor deposition for graphene film.