• 专利标题:   Graphene transmission line distributed amplifier circuit topology structure, has capacitor connected with source electrode of graphene amplifier, and drain electrode bias component connected with connecting end of graphene amplifier.
  • 专利号:   CN105577126-A, CN105577126-B
  • 发明人:   PAN Z, WANG Y, YE Z, ZHANG J
  • 专利权人:   UNIV TSINGHUA, UNIV TSINGHUA
  • 国际专利分类:   H03F001/56, H03F003/189
  • 专利详细信息:   CN105577126-A 11 May 2016 H03F-001/56 201637 Pages: 8 English
  • 申请详细信息:   CN105577126-A CN10938376 15 Dec 2015
  • 优先权号:   CN10938376

▎ 摘  要

NOVELTY - The structure has a first graphene strip and a second graphene strip that are connected with a graphene amplifier. A first connecting end of the graphene amplifier is connected with a first drain electrode bias component by a connecting drain bias terminal. A second connecting end of the graphene amplifier is connected with a radio frequency signal input terminal. A gate bias element i.e. grid electrode bias resistor is connected with a source electrode of the graphene amplifier. A second drain electrode bias component is connected with a second connecting end of the graphene amplifier. USE - Graphene transmission line distributed amplifier circuit topology structure. ADVANTAGE - The structure has high safety performance, and reduces damages and pollution rate and space consumption rate and avoids design difficulties. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of a graphene transmission line distributed amplifier circuit topology structure. '(Drawing includes non-English language text)'