▎ 摘　　要

NOVELTY - Constructing fully covalent bond graphene FET involves: (1) immersing a substrate in a piranha solution at 80-100 degrees C, taking out, rinsing with deionized water, then ultrasonically cleaning, and treating the substrate with plasma in an oxygen environment; (2) preparing an (3-aminopropyl)trimethoxysilane (APTMS)/graphene oxide (GO) layer on the substrate treated in step (1) to obtain a substrate supporting the APTMS/GO layer, and then preparing a 2-amino-5,10,15,20-tetraphenylporphyrin (TPPNH2)/GO layer on the APTMS/GO layer to obtain a substrate with loaded (APTMS/GO)/(TPPNH2/GO) layer; and (3) covering a mask on the substrate of the loaded (APTMS/GO)/(TPPNH2/GO) layer obtained in step (2), evaporating aluminum film, removing the mask, using plasma treatment to remove the (APTMS/GO)/(TPPNH2/GO) layer not covered by the aluminum film in an oxygen environment, and soaking the plasma-treated material in a dilute aqueous solution of nitric acid. USE - The method is useful for constructing fully covalent bond graphene FET (claimed). ADVANTAGE - The method provides fully covalent bond graphene FET with excellent electrical performance and stability. DETAILED DESCRIPTION - Constructing fully covalent bond graphene FET involves: (1) immersing a substrate in a piranha solution at 80-100 degrees C, taking out, rinsing with deionized water, then ultrasonically cleaning, and treating the substrate with plasma in an oxygen environment; (2) preparing (3-aminopropyl)trimethoxysilane (APTMS)/graphene oxide (GO) layer on the substrate treated in step (1) to obtain a substrate supporting the APTMS/GO layer, and then preparing a 2-amino-5,10,15,20-tetraphenylporphyrin (TPPNH2)/GO layer on the APTMS/GO layer to obtain a substrate loaded with (APTMS/GO)/(TPPNH2/GO) layer; (3) covering a mask on the substrate of the loaded (APTMS/GO)/(TPPNH2/GO) layer obtained in step (2), evaporating aluminum film with a thickness of 30-100 nm, removing the mask after evaporation, using plasma treatment to remove the (APTMS/GO)/(TPPNH2/GO) layer not covered by the aluminum film in an oxygen environment, soaking the plasma-treated material in a dilute aqueous solution of nitric acid at 30-100 degrees C to remove the aluminum film, taking out, rinsing with deionized water, then ultrasonically cleaning, and blow drying with nitrogen after cleaning to obtain a substrate of loaded (APTMS/GO)/(TPPNH2/GO) array; (4) preparing an APTMS/GO layer on the substrate loaded with (APTMS/GO)/(TPPNH2/GO) array obtained in step (3) to obtain base/((APTMS/GO)/(TPPNH2/GO) array)/(APTMS/GO) layer; (5) reducing under vacuum conditions, heating the material obtained in step (4) at a heating rate of 1-10 degrees C/minute to 140-260 degrees C for 5-10 hours to obtain a substrate/((APTMS/reduced graphene oxide (RGO))/(TPPNH2/RGO) array)/(APTMS/RGO) layer, taking (APTMS/RGO)/(TPPNH2/RGO) array as source and drain electrodes, APTMS/RGO layer as an active layer and the substrate as gate and dielectric layer and constructing into the target product.