• 专利标题:   Silicon substrate, has silicone/graphene molecule nano sensor including graphene layer arranged at upper part of silicon nano line, where silicon nano line is combined with substrate and equipped with graphene molecule nano sensor.
  • 专利号:   WO2015008905-A1, KR2015017422-A
  • 发明人:   CHOI S H, KIM S, KIM J K, SHIN D H
  • 专利权人:   UNIV KYUNGHEE IND COOP
  • 国际专利分类:   B82B003/00, G01N027/04
  • 专利详细信息:   WO2015008905-A1 22 Jan 2015 G01N-027/04 201509 Pages: 22
  • 申请详细信息:   WO2015008905-A1 WOKR010373 15 Nov 2013
  • 优先权号:   KR084226

▎ 摘  要

NOVELTY - The substrate has a silicone/graphene molecule nano sensor including a graphene layer arranged at an upper part of a silicon nano line. The silicon nano line is combined with the substrate. The silicon nano line is equipped with the graphene molecule nano sensor. Molecule of gas molecule is formed in the graphene molecule nano sensor. A graphene molecular sensor includes a contact electrode arranged in the substrate and a graphene layer. The graphene is in the form of single layer or 2 layer graphene. USE - Silicon substrate. ADVANTAGE - The substrate allows a graphene graft arranged on the molecular sensor based on the silicon nano line so as to improve efficiency of the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a substrate manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a silicon substrate.