▎ 摘　　要

NOVELTY - The method involves forming a semi-closed area at regular intervals on the surface of a bottom electrode layer (2). An absorption layer (3) is deposited on the bottom electrode layer to form a battery PN junction. The absorption layer is etched to form a P2 line (7). The bottom of P2 line is provided to extend to the bottom electrode layer. The P2 line is located inside the semi-closed area formed by a P1 line (6). A top electrode layer (4) is deposited on the upper surface of the absorption layer containing P2 line. A gate line (5) is prepared on the upper surface of the top electrode layer. The gate line is connected to P2 line. The surface of the top electrode layer is etched after preparing the gate line to form a P3 line (8). The bottom of the P3 line is provided to extend to the upper surface of the bottom electrode layer. The division and series connection of thin-film solar cell is realized. USE - Scribing method for reducing dead zone area of thin film solar cell. ADVANTAGE - The device reduces dead zone area of the thin film solar cell to improve power of the thin film solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the scribing device for reducing dead zone area of thin film solar cell. Bottom electrode layer (2) Absorption layer (3) Top electrode layer (4) Gate line (5) P2 line (7) P3 line (8)