▎ 摘　　要

NOVELTY - The method involves providing a substrate. A transition layer is formed on the substrate. A metal wiring layer is formed on the transition layer. The metal wiring layer is filled in an interlayer dielectric layer to form a metal wiring interlayer dielectric layer. A connecting line is formed on the interlayer medium layer. A connecting part is connected with the metal wiring layer. A source electrode, a drain electrode, a grid medium layer and a grid electrode are formed on a graphene thin film. USE - Method for manufacturing a 2D material nanometer semiconductor device. ADVANTAGE - The method enables manufacturing a 2D material nanometer semiconductor device in an easy, stable and reliable manner with better gate control capability and small source-drain contact. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a two-dimensional (2D) material nanometer semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a 2D material nanometer semiconductor device.