▎ 摘　　要

NOVELTY - Synthesis of indium sulfide nanosphere/graphene foam composite material comprises (A) chemical vapor deposition by placing nickel foam in center of quartz tube furnace, heating, introducing methane gas into tube furnace, and cooling to obtain nickel foam wrapped by graphene; dissolving polymethyl methacrylate in ethyl lactate, heating and stirring to obtain mixed solution, using sample gun to drop mixed solution onto graphene-coated nickel foam, drying, and keeping to obtain polymethyl methacrylate-coated graphene foam; cutting polymethyl methacrylate-coated graphene foam into cubes, and soaking in hydrochloric acid solution to get three-dimensional graphene foam with nickel removed; and soaking nickel-removed three-dimensional graphene foam in acetone to obtain polymethylmethacrylate-removed graphene foam, washing graphene foam, and soaking in nitric acid, rinsing in deionized water and transferring to clean indium titanium dioxide (ITO) glass; and (B) hydrothermal synthesis. USE - The method is used for synthesis of indium sulfide nanosphere/graphene foam composite material used as working electrode (claimed). ADVANTAGE - The material has high sensitivity, and good selectivity, repeatability and stability. DETAILED DESCRIPTION - Synthesis of indium oxide nanosheet array/foamed graphene composite material comprises: (A) chemical vapor deposition by placing nickel foam with density of 420-440 g/m2 and thickness of 1.6-2.0 mm in center of quartz tube furnace, where flow rate of argon is 480-500 cm3/minute and flow rate of hydrogen is 180-200 cm3/minute, heating to 1000-1100 degrees C at 20-40 degrees C/minute, keeping temperature at 1000-1100 degrees C for 30-60 minutes, introducing methane gas into tube furnace at 5-10 cm3/minute for 5-20 minutes, and cooling at 80-100 degrees C/minute to room temperature to obtain nickel foam wrapped by graphene; dissolving 4-5% polymethyl methacrylate in ethyl lactate, heating and stirring at 80-120 degrees C for 1-2 hours to obtain mixed solution, using sample gun to drop mixed solution onto graphene-coated nickel foam obtained in first step, drying naturally at room temperature and at 150-200 degrees C, and keeping for 0.5-1 hours to obtain polymethyl methacrylate-coated graphene foam; cutting polymethyl methacrylate-coated graphene foam into cubes with surface area of 0.5-2 cm2, and fully soaking at 80-90 degrees C in 3-4 mol/L hydrochloric acid solution to get three-dimensional graphene foam with nickel removed; and soaking nickel-removed three-dimensional graphene foam in acetone at 60-70 degrees C for 0.5-1.5 hours to obtain polymethylmethacrylate-removed graphene foam, washing graphene foam from which polymethyl methacrylate is removed with distilled water to obtain clean graphene foam from which polymethyl methacrylate is removed, and soaking cleaned graphene foam from which polymethyl methacrylate is removed in 2-4 mol/L nitric acid for 10-14 hours, rinsing in deionized water and transferring to clean indium titanium dioxide (ITO) glass, where indium sulfide seed layer solution is synthesized by dissolving 0.01-0.03 mol/L indium chloride tetrahydrate and 0.05-0.07 mol/L thioacetamide in ethanol and magnetically stirring at 450-550 revolutions/minute for 15-20 minutes to obtain indium sulfide seed layer solution; and (B) hydrothermal synthesis by using ethylene glycol as solvent to prepare indium chloride solution with concentration of 0.01-0.03 mol/L and thioacetamide solution with concentration of 0.05-0.07 mol/L, mixing two solutions, magnetically stirring at 450-550 revolutions/minute for 15-20 minutes to obtain hydrothermal reaction solution; and pouring hydrothermal reaction solution into reaction kettle, placing three-dimensional foam graphene/ITO glass upside down in mixed solution in reaction kettle, covering reaction kettle lid, reacting at 190-210 degrees C for 8-14 hours, taking out, cooling to room temperature naturally to obtain composite material, opening reactor to clean composite material with distilled water at 480-550 cm3/minute, keeping temperature at 450-500 degrees C for 1-3 hours in argon atmosphere, and cooling to room temperature with furnace.