▎ 摘　　要

NOVELTY - Preparing two-dimensional compound semiconductor thin film comprises (i) depositing metal oxide film on the surface of the insulating substrate, and pre-annealing, (ii) preparing single-layer two-dimensional layered material continuous film on the surface of the catalytic substrate, (iii) transferring the continuous film of the single-layer two-dimensional layered material to the surface of the pre-annealed metal oxide film and constructing a confined space, and (iv) placing obtained insulating substrate with the single-layer two-dimensional layered material/metal oxide film vertical heterostructure on the surface in a heating device, and introducing carrier gas and the precursor required for the reaction, where the metal oxide film in the confined space under heating conditions chemically reacts with the precursor, and simultaneously suppressing vertical growth to obtain large-area two-dimensional compound semiconductor thin film. USE - The two-dimensional compound semiconductor thin film is useful in micro-nano electronic device (claimed). ADVANTAGE - The method has certain universality and can efficiently solve the problems of three-dimensional growth and small grain size in the thin film preparation process, so as to realize the large-area preparation of various two-dimensional compound semiconductor thin films, the continuous film of single-layer two-dimensional layered material is used as the encapsulation layer, which can efficiently ensure the intrinsic properties of the two-dimensional compound semiconductor film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a two-dimensional compound semiconductor thin film, prepared by the above method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flow chart of preparation of two-dimensional compound semiconductor thin film (Drawing includes non-English language text).