• 专利标题:   Combination of substrate comprising silicon, silicon carbide or metal and graphene precursor with aromatic structure e.g. benzene and functional groups e.g. dienes to grow graphene structure used in e.g. large integrated electronic devices.
  • 专利号:   US8779177-B1
  • 发明人:   ZHOU C, SALGUERO T T
  • 专利权人:   HRL LAB LLC
  • 国际专利分类:   C07F007/02
  • 专利详细信息:   US8779177-B1 15 Jul 2014 C07F-007/02 201452 Pages: 10 English
  • 申请详细信息:   US8779177-B1 US959197 02 Dec 2010
  • 优先权号:   US959197

▎ 摘  要

NOVELTY - Combination of a substrate comprising silicon, silicon carbide or a metal, and a graphene precursor having an aromatic structure comprising benzene, naphthalene, pyrene, anthracene, chrysene, coronene or phenanthrene or a cyclic or acyclic structures which can be converted to aromatic structures, that forms the basis of graphene structure and at least two different types of functional groups comprising carbon-carbon double bonds, carbon-carbon triple bonds, dienes and/or ketones that can react with each other to grow graphene structure by forming additional carbocyclic aromatic structures. USE - The combination is useful: in the production of nanotubes and other similar structures; and for production of large integrated electronic devices. ADVANTAGE - The combination: comprises precursor, which is designed so as to reduce or even eliminate the tendency of aromatic structures to stack upon each other ( pi - pi stacking interactions), which ultimately will lead to predominantly single layer graphene sheets, and the precursor is readily dissolved in solvents (all claimed); and provides graphene sheet, which remains adherent to the substrate. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) graphene precursor, which is 4,4'-(1,4-phenylene)bis(3-(3-ethynylphenyl)-2,5-diphenylcyclopenta-2,4-dienone) (I); and (2) graphene precursor of formula (II). Z = COOH, SO3H, SH, OH, NH2, NHR, NR2, NR3+, SiX3 or Si(OR)3; R = alkyl or aryl; and X = halo.