▎ 摘　　要

NOVELTY - The device has a middle insulating layer (101) formed between a bottom electrode (100) and a top electrode (103). The middle insulating layer is formed with a composite film of graphene oxide doped with nitrogen-containing carbon quantum dots (102), where thickness of the middle insulating layer is measured for about 60-80nm. The top electrode is provided with reducing graphene oxide. Wavelength of an ultraviolet light (104) is measured for about 320-380nm. USE - Analog-type full carbon memory resistance synaptic contact device. ADVANTAGE - The device can realize short term and long-term synaptic plasticity such as dual-pulse facilitation and time sequence dependent synaptic plasticity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an analog-type full carbon memory resistance synaptic contact device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of an analog-type full carbon memory resistance synaptic contact device. Bottom electrode (100) Middle insulating layer (101) Nitrogen-containing carbon quantum dots (102) Top electrode (103) Ultraviolet light (104)