▎ 摘　　要

NOVELTY - The transistor has graphene (3) that is formed on the insulator (2) provided on the substrate (1), in the growth process of carbon nanotube. A gate electrode (6) is formed while forming source electrode (4) in one edge, and drain electrode (5) on the other edge of insulator. The catalyst such as titanium nitride/cobalt is used for the growth of carbon nanotube. USE - Graphene transistor such as FET for high frequencies. Can also be used in transistor for electric power, insulated gate transistor, schottky barrier gate-type transistor, etc. ADVANTAGE - Graphene of single layer can be removed easily. Mass production of small sized high speed transistor can be enabled. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of graphene transistor. (Drawing includes non-English language text) Substrate (1) Insulator (2) Graphene (3) Source electrode (4) Drain electrode (5) Gate electrode (6)