• 专利标题:   Method for producing graphene, involves providing source of carbon in form of vapors of benzene and reaction chamber in which benzene vapors have temperature in specific range.
  • 专利号:   KZ28561-A4
  • 发明人:   ILYIN A M, HUSEYNOV N R, NEMKAEVA R R
  • 专利权人:   UNIV KAZAKH NAT NANOTECHNOLOGICAL LAB
  • 国际专利分类:   B82B001/00
  • 专利详细信息:   KZ28561-A4 16 Jun 2014 B82B-001/00 201930 Pages: 1 Russian
  • 申请详细信息:   KZ28561-A4 KZ000956 13 Sep 2012
  • 优先权号:   KZ000956

▎ 摘  要

NOVELTY - The method involves obtaining graphene and ultrathin graphite (containing 2-4 layers of graphene) and usnig to create nanoelectronic systems based on the use of graphene with controlled electronic properties, such as highly sensitive sensors, radiation, gas, mechanical vibrations. The source of carbon is provided in the form of vapors of benzene and the reaction chamber in which the benzene vapors have a temperature in the range of 890-930 degrees C at the atmospheric pressure. USE - Method for producing graphene. ADVANTAGE - The rate of reaction of graphene formation is increased, the cost of manufacturing technology of graphene coatings is simplified and lowered and conditions for their mass production are created.