▎ 摘　　要

NOVELTY - Epitaxial growth method of graphene thin film involves providing a substrate into a metal-organic chemical vapor deposition growth chamber, introducing hydrogen into the reaction chamber for pre-treatment of the substrate surface, providing copper into the reaction chamber and processing, then introducing hydrogen into the reaction chamber and annealing, introducing argon gas and methane gas into the reaction chamber and heating, introducing boron trihydride into the reaction chamber and processing, and naturally cooling. USE - Epitaxial growth method of graphene thin film used for manufacturing graphene device. ADVANTAGE - The method enables formation of graphene thin film by simple process. DETAILED DESCRIPTION - Epitaxial growth method of graphene thin film involves providing a substrate into a metal-organic chemical vapor deposition growth chamber, introducing hydrogen at a flow rate of 1-20 sccm into the reaction chamber for pre-treatment of the substrate surface, in which pre-treatment is performed at 900-1000 degrees C for 1-10 minutes under pressure of 0.1-1 Torr, providing copper into the reaction chamber at a flow rate of 100-1000 sccm and processing at 100-700 degrees C for 1-5 hours under pressure of 0.1-5 Torr, such that a metal thin film is deposited, then introducing hydrogen into the reaction chamber at a flow rate of 1-20 sccm, annealing at 900-1000 degrees C for 20-60 minutes under pressure of 1-50 Torr, introducing argon gas at a flow rate of 20-200 sccm and methane gas at a flow rate of 1-20 sccm into the reaction chamber and heating at 1000-1100 degrees C for 20-60 minutes under pressure of 0.1-1 Torr, introducing boron trihydride at a flow rate of 0.1-5 sccm into the reaction chamber, processing, and naturally cooling to less than 100 degrees C.