• 专利标题:   Method for producing graphene foam-protected selenium cathode layer, involves providing layer of solid graphene foam having pores or cells and pore walls containing graphene sheets, and infiltrating or impregnating selenium into pores.
  • 专利号:   US2019312261-A1, WO2019199774-A1
  • 发明人:   HE H, ZHAMU A, JANG B Z
  • 专利权人:   NANOTEK INSTR INC
  • 国际专利分类:   H01M010/052, H01M010/054, H01M004/04, H01M004/1395, H01M004/38, H01M004/66, H01M004/80, H01M004/13, H01M004/139, H01M004/62
  • 专利详细信息:   US2019312261-A1 10 Oct 2019 H01M-004/1395 201980 Pages: 32 English
  • 申请详细信息:   US2019312261-A1 US948343 09 Apr 2018
  • 优先权号:   US948343, US948367

▎ 摘  要

NOVELTY - A graphene foam-protected selenium cathode layer producing method involves providing a layer of solid graphene foam having pores or cells and pore walls containing graphene sheets and having a physical density of 0.001-1.5 g/cm3, and infiltrating or impregnating selenium into pores to obtain the finished product, where the graphene sheets comprises pristine graphene or non-pristine graphene material, the content of non-carbon elements greater than 2 wt.% selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated grapheme and chemically functionalized graphene. USE - Method for producing graphene foam-protected selenium cathode layer.