▎ 摘　　要

NOVELTY - The electronic component (100) has a graphene channel layer (120) that is arranged on a silicon substrate (110). The source electrode (130) and drain electrode (140) are formed at both ends of the graphene channel layer. A gate electrode (160) is arranged on a protective layer (150) formed on the graphene channel layer. The protective layer is formed identical to the shape of the graphene channel layer between the source electrode and the drain electrode. USE - Graphene electronic component such as radio frequency (RF) transistor and FET (all claimed). ADVANTAGE - Occurrence of damage to graphene at the etching process of the photoresist can be reduced, by effectively maintaining the property of graphene channel layer in the manufacturing process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of graphene electronic component. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene electronic component. Graphene electronic component (100) Silicon substrate (110) Graphene channel layer (120) Source electrode (130) Drain electrode (140) Protective layer (150) Gate electrode (160)