• 专利标题:   Preparation of low-temperature gas phase reduction high conductive graphene material e.g. used in photovoltaic cell by making use of temperature zone heating equipments of high temperature area and low temperature area.
  • 专利号:   CN102583340-A, CN102583340-B
  • 发明人:   HUANG F, LIN T, WAN D, YANG C
  • 专利权人:   CHINESE ACAD SCI SHANGHAI CERAMICS INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102583340-A 18 Jul 2012 C01B-031/04 201272 Pages: 13 Chinese
  • 申请详细信息:   CN102583340-A CN10019931 20 Jan 2012
  • 优先权号:   CN10019931

▎ 摘  要

NOVELTY - A low-temperature gas phase reduction high conductive graphene material is prepared by making use of temperature zone heating equipments of high temperature area and low temperature area, heating low temperature area with graphene oxide and high temperature area with reductant to certain temperature, and reducing out high conductive graphene. The temperature of low temperature area is 50-500 degrees C. High temperature area is 400-1200 degrees C. USE - Method for preparing low-temperature gas phase reduction high conductive graphene material used in photovoltaic cell, graphic display, semiconductor electronic and energy storage device (claimed). ADVANTAGE - The prepared graphene material has good electrical conductivity, mechanical strength and flexibility. It effectively solves problem that the high temperature heat treatment or low temperature liquid phase chemical reduction method will break structure of the graphene. The method is conducted at low temperature, realizes quick and highly efficient reduction of graphene oxide, has low-temperature gas phase reaction keeping whole structure of graphene oxide.