▎ 摘　　要

NOVELTY - Preparation of quantum dot-hybrid reduced graphene oxide nanofilm photosensitive sensor involves forming graphene oxide film having thickness of 20-100 nm, on a substrate, hybridizing, obtaining quantum dot-hybrid graphene oxide nanofilm, performing photochemical reduction process under protective atmosphere, obtaining electrode and forming photosensitive sensor using the electrode. USE - Preparation of quantum dot-hybrid reduced graphene oxide nanofilm photosensitive sensor (claimed). ADVANTAGE - The method provides quantum dot-hybrid reduced graphene oxide nanofilm photosensitive sensor having excellent photoelectric property and photosensitivity, by simple and economical process.