• 专利标题:   Self-assembly omnidirectional high temperature vibration sensing array based on two-dimensional crystal piezoelectric material for use in aerospace, comprises single crystal silicon substrate, stress layer, hetero-junction, and nano-protective layer structure.
  • 专利号:   CN115096430-A
  • 发明人:   GUO Y, DENG T
  • 专利权人:   UNIV BEIJING JIAOTONG
  • 国际专利分类:   G01H011/08
  • 专利详细信息:   CN115096430-A 23 Sep 2022 G01H-011/08 202283 Chinese
  • 申请详细信息:   CN115096430-A CN10687914 17 Jun 2022
  • 优先权号:   CN10687914

▎ 摘  要

NOVELTY - The array has a stress layer (3) formed on the single crystal silicon substrate (1). A heterojunction is provided with a gate electrode (4), a dielectric layer (5), and a two-dimensional crystal piezoelectric material layer (6). The structure of the source electrode (7), the drain electrode (8) and the nano protective layer (9) on both sides of the upper and lower edge lines of the two-dimensional crystal piezoelectric material layer. The stress layer makes the heterojunction self-assemble into a semicircle. A three-dimensional structure is formed. A multi-layer circular array is performed on the above structure to obtain a three-dimensional self-assembled omnidirectional piezoelectric vibration sensor array structure (10). USE - Self-assembly omnidirectional high temperature vibration sensing array based on two-dimensional crystal piezoelectric material for use in aerospace, national defense, military affairs and transportation fields. ADVANTAGE - The micro-scale of the omnidirectional vibration sensor is realized by single chip integration, at the same time, it realizes high sensitivity, wide range and high temperature resistance detection. By three-dimensional micro-tube structure can greatly reduce the occupied area of the chip, reduce the device power consumption, to greatly improve the comprehensive performance. The stress in the self-assembly structure can break the intrinsic symmetry of the two-dimensional crystal piezoelectric material, further improves the piezoelectric characteristics to obtain graphene can reach 14.8* 103pC/N. The radius of the curvature-circular three-dimensional structure is changed when the vibration occurs, the source and drain bias voltage and/or gate voltage can be applied, amplifying and controlling the three-dimensional self-assembled omnidirectional high-temperature vibration sensing array. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of the self-assembled omnidirectional high temperature vibration sensing array based on two-dimensional crystal piezoelectric material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural diagram of a self-assembled omnidirectional high temperature vibration sensing array based on a two-dimensional crystal piezoelectric material. 1Single crystal silicon substrate 3Stress layer 4Gate electrode 5Dielectric layer 6Two-dimensional crystal piezoelectric material layer 7Source electrode 8Drain electrode 9Nanometer protective layer 10Piezoelectric vibration sensor array structure