▎ 摘　　要

NOVELTY - The manufacturing method involves forming on a substrate a pattern with a material- containing carbon, and growing graphene (GRP) on the substrate in which the pattern is formed. The substrate includes a metal catalyst layer including copper, nickel, cobalt, iron, platinum, gold, aluminum, chromium, magnesium, manganese, rhodium, tantalum, titanium, tungsten , uranium, vanadium, zirconium or a combination. USE - Manufacturing method of graphene device used in electronic devices including transistors, bio engineering, energy storage, optical cells. ADVANTAGE - Reduces the process time and costs since there is no need for a separate metal. Obtains a graphene device in a simple manner without an additional process, by applying the single-layer and/or multiple-layer graphene to devices such as a channel, source, drain and the like. Capable of synthesizing multiple-layer graphene and single-layer graphene in a simple method, and apply the graphene in manufacturing a device easily without any further process. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene device. Graphene (GRP) Target substrate (T-SUB)