▎ 摘　　要

NOVELTY - The method involves forming passivation layer of a high-k dielectric film having a dielectric constant of 10 or more made of an amorphous hydrocarbon thin film on portion or the entire surface of the charge channel layer of the field induction thin film transistor. The passivation layer is acted as a gate dielectric film. The amorphous hydrocarbon thin film is directly grown on the surface of the channel layer or passivated by transferring the amorphous hydrocarbon thin film to the surface of the channel layer. The thickness of the amorphous hydrocarbon thin film is a single atomic layer thickness. The channel layer is made of silicon, metal oxide semiconductor, organic semiconductor and graphene. USE - Method for improving charge mobility of charge channel layer in structure. ADVANTAGE - The charge mobility is significantly increased only by passivating the charge channel layer with amorphous hydrocarbon thin film that is grown in simple process using inexpensive raw materials, so that the charge channel layer requiring rapid movement is greatly improved. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation showing electrical characteristics of FET including amorphous hydrocarbon thin film transferred.