• 专利标题:   Method for preparing of boron, involves cooling reactor to room temperature, using specific material to wash product, placing product in vacuum drying oven for drying and introducing inert gas as protective gas for calcination.
  • 专利号:   CN113912047-A
  • 发明人:   CHANG A, CHEN L, ZHU J, KONG W
  • 专利权人:   XINJIANG TECH INST PHYSICS CHEM CH
  • 国际专利分类:   C01B032/184, C01B032/198, G01K007/22
  • 专利详细信息:   CN113912047-A 11 Jan 2022 C01B-032/184 202245 Chinese
  • 申请详细信息:   CN113912047-A CN11343276 13 Nov 2021
  • 优先权号:   CN11343276

▎ 摘  要

NOVELTY - The method involves modifying a graphene oxide by Hummers method to obtain a viscous liquid. The graphene oxide is placed in a vacuum drying box with a temperature of 30-40degrees C for dehumidification treatment for 6-12 hours after the viscous liquid is freeze-dried for 15-20 hours. The reducing drug is placed as thiourea and boric acid in a beaker, deionized water is added and magnetic stirring is performed at room temperature for 15-30 min. The graphene oxide powder is added to the solution and ultrasonically treated for 1-2 hours under the condition of an ice bath to obtain a graphene oxide suspension. The reactor is cooled to room temperature and dehydrated ethanol is used to wash a product again for 3-6 times. The product is placed in a vacuum drying oven for drying. The product is placed in a tube furnace. An inert gas is introduced as a protective gas for calcination. The reduced graphene oxide material doped with boron, nitrogen and sulfur ternary is obtained. USE - Method for preparing of boron, nitrogen and sulphur ternary-doped reduction-oxidation graphene material used for preparation of nanomaterials and temperature sensing. ADVANTAGE - The method has simple steps, experiment operation safety, low preparation cost and excellent material performance. The obtained boron, nitrogen, sulfur ternary-doped reducing graphene oxide material has a larger specific surface area, while enlarging the surface defect degree and porosity, so as to improve the mobility of the carrier. The graphene material after doping is made of temperature-sensitive device. The resistance has obvious change and monitors the temperature accurately in real time. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a SEM image of ternary doped reducing graphene oxide prepared.