• 专利标题:   Manufacture of graphene transparent thin film involves carrying out chemical vapor deposition of graphene film on substrate, coating polymethylmethacrylate or photoresist, and electrolyzing and separating film.
  • 专利号:   CN102719803-A, CN102719803-B
  • 发明人:   CHEN G, KONG D, LIANG Q, MEI J
  • 专利权人:   SHENZHEN BTR NANO TECH CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26, C23C016/56, C25F005/00
  • 专利详细信息:   CN102719803-A 10 Oct 2012 C23C-016/26 201374 Pages: 10 Chinese
  • 申请详细信息:   CN102719803-A CN10235069 09 Jul 2012
  • 优先权号:   CN10235069

▎ 摘  要

NOVELTY - A metal substrate is placed in an electric furnace, and the furnace is filled with hydrogen and argon gas. The temperature of the furnace is raised to 50-120 degrees C and maintained for 20-30 minutes. Carbon source gas is filled in the furnace and graphene film is vapor deposited on the substrate. Polymethyl-methacrylate or photoresist is coated on the graphene surface, to form a supporting layer on the surface of graphene. The graphene thin film with the support layer is electrolyzed, and the graphene film is separated and transferred to another substrate. USE - Manufacture of graphene transparent thin film (claimed). ADVANTAGE - The graphene transparent thin film without any defects is manufactured. Since the metal substrate can be used repeatedly, the manufacturing cost is reduced. The graphene thin film is adhered stably on the other substrate and has reduced impurities. DETAILED DESCRIPTION - A metal substrate is placed in an electric furnace, and the furnace is filled with hydrogen and argon gas. The temperature of the furnace is raised to 50-120 degrees C and maintained for 20-30 minutes. Carbon source gas is filled in the furnace and retained for 5-20 minutes. The furnace is cooled to room temperature and filled with hydrogen gas and argon gas, and graphene film is vapor deposited on the substrate. The carbon source gas is methane, ethane, ethylene, propylene, acetylene, ethanol, benzene and/or toluene. Polymethyl-methacrylate or photoresist is coated on the graphene surface to a thickness of less than 1 micron, and the temperature is raised to 60-120 degrees C. The coated substrate is cooled to room temperature to form a supporting layer on the surface of graphene. The graphene thin film with the support layer and the metal substrate as cathode is inserted into an electrolytic solution, and electrolyzed. The graphene film is separate from the metal substrate, and transferred to another substrate. The electrolytic solution is 0.5-2M sodium hydroxide solution, or 0.05-0.5M potassium persulfate. The graphene thin film transferred on another substrate is added into acetone solution.