▎ 摘　　要

NOVELTY - Manufacture of porous graphene component involves performing process of introducing carbon source and substitution source in vapor deposition furnace, simultaneously depositing carbon monoatomic layer on substrate positioned inside the vapor deposition furnace using the carbon atoms generated by thermal decomposition of carbon source, and artificially introducing crystal defect into covalent bond part of carbon atoms constituting the carbon monoatomic layer by using substitutional atoms generated by thermally decomposing substitution reaction source in in-situ system. USE - Manufacture of porous graphene component (claimed). ADVANTAGE - The manufacturing method of porous graphene component is simple. DETAILED DESCRIPTION - Manufacture of porous graphene component involves performing process of introducing carbon source and substitution source in vapor deposition furnace, simultaneously depositing carbon monoatomic layer on substrate positioned inside the vapor deposition furnace using the carbon atoms generated by thermal decomposition of carbon source, artificially introducing crystal defect into covalent bond part of carbon atoms constituting the carbon monoatomic layer by using substitutional atoms generated by thermally decomposing substitution reaction source in in-situ system, substituting carbon atoms of crystal defect part with substitutional atoms, forming porous graphene component in which pores which penetrate carbon monoatomic layer are formed, and separating porous graphene component from substrate. INDEPENDENT CLAIMS are included for: (1) manufacturing apparatus of porous graphene component including sample supply apparatus provided with 1st and 2nd sample supply apparatuses, simultaneous vaporizer provided with 1st and 2nd vaporizers, and vapor deposition furnace provided with substrate; and (2) porous graphene component. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the manufacturing method of porous graphene component. (Drawing includes non-English language text). Vaporizing step (S10) Precursor introduction step (S20) Pore formation step (S30)