▎ 摘　　要

NOVELTY - The method involves forming a first graphene sheet (206a). The first gate layer is coupled to a surface of the first grapheme sheet to influence an electric field of the first grapheme sheet. The source contact (210) and drain contact (212) are coupled to the surface of the first graphene sheet. The second graphene sheet (206b) is coupled to the first gate layer, the source contact and the drain contact such that the first gate layer influences an electric field of the second graphene sheet. The second gate layer is formed to the second graphene sheet. USE - Method for forming graphene field-effect transistor (GFET). ADVANTAGE - Since the first graphene sheet is formed, the number of graphene sheets can affect various transistor parameters such as drain current and/or transconductance. Thus, the number of graphene sheets can be selected to form a GFET having a parameter that is within a selected criterion. Hence, the number of gate layers can be increased without increasing the footprint of the transistor. The presence of the second graphene sheet enhances a performance characteristic of the GFET while maintaining a footprint of the GFET at the substrate without increasing the surface area required by the GFET at the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene field-effect transistor. Substrate (102) First graphene sheet (206a) Second graphene sheet (206b) Source contact (210) Drain contact (212)