▎ 摘 要
NOVELTY - Visible to mid-infrared tunable ultra-narrowband absorber, comprises the substrate (1) provided with bottom Bragg reflection layer (2), a resonant cavity (3) composed of a first graphene layer (3-1) provided with lower electrode (4) and second graphene layer (3-3) provided with upper electrode (5), and a dielectric interval layer (3- 2), and resonant cavity is provided with a top Bragg reflection layer (6). The substrate is silicon (Si) substrate with silicon dioxide (SiO2) film with the thickness of 300 nm on surface. The first and second graphene layer are made of a single-atom layer of graphene capable of electrostatic grid control; where the first graphene layer is located on the bottom Bragg reflection layer ; and the second graphene layer is located on dielectric interval. The dielectric interval layer is SiO2, aluminum oxide (Al2O3) or hafnium oxide (HfO2) film layer, with the thickness (h2) of 20 nm. The lower and upper electrods are gold (Au) electrode. USE - Visible to mid-infrared tunable ultra-narrowband absorber. ADVANTAGE - The critical coupling of the system is achieved by constructing the component and the Bragg reflecting layer with proper period number, controlling the Fermi level of the graphene, realizing perfect absorption from visible infrared tunable ultra-narrow band. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of visible to mid-infrared tunable ultra-narrowband absorber.(Drawing includes non-English language text). 1Substrate 2Bottom bragg reflection layer 3Resonant cavity layer 3-1First graphene layer 3-2Dielectric interval layer 3-3Second graphene layer 4Lower electrode 5Upper electrode 6Top Bragg reflection layer