▎ 摘　　要

NOVELTY - The transistor has a substrate (12) whose upper and lower ends are respectively provided with a grate electrode metal layer (11) and a gate medium layer (13). A nano tube layer is arranged on the substrate. The nano tube layer is provided with a graphene layer (14) and a carbon nano tube layer (17). The graphene layer is contacted with the gate medium layer. The graphene layer is provided with the source and drain electrodes. The carbon nano tube layer is arranged between source and drain electrodes. USE - Infrared light detection transistor of spectrum detection analysis device for image display sensing device (all claimed), used in wired communication field, wireless communication field, military field and civil field. ADVANTAGE - The operating efficiency of light detection transistor can be improved effectively. The manufacturing cost of light detection transistor can be reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of the infrared light detection transistor. Grate electrode metal layer (11) Substrate (12) Gate medium layer (13) Graphene layer (14) Carbon nano tube layer (17)