▎ 摘　　要

NOVELTY - Semiconductor component comprises at least one graphene layer (3), where at least one graphene layer (3) is deposited directly on the functional layer (2) to form a layer system (6) with the functional layer (2). USE - Used as a semiconductor component (claimed). ADVANTAGE - The semiconductor component offers the possibility of direct graphene growth on an isolator or semiconductor at compatible parameters of contemporary growth technology. An epitaxial grown semiconductor component, where an epitaxially grown graphene layer is implementable within a complementary-symmetry metal-oxide-semiconductor (CMOS) standard, is provided. DETAILED DESCRIPTION - Semiconductor component comprises a silicon containing layer (1); at least one graphene layer (3); and a functional layer (2) between the silicon containing layer (1) and the graphene layer (3). At least one graphene layer (3) is deposited directly on the functional layer (2) to form a layer system (6) with the functional layer (2). The functional layer (2) includes at least one dielectric material having a dielectric constant k in a range between K=3 to K=1000, in particular in a range between K=3 to K=400. A conductance of the functional layer (2) in the layer system (6) is below a conductance of the graphene layer (3). An INDEPENDENT CLAIM is a method of producing a semiconductor component by providing a silicon containing layer (1); depositing a functional layer (2) on the silicon containing layer (1) by one or more functional layer depositing steps, where at least one dielectric material having a dielectric constant K in between K=3 to K=400 is deposited; and directly depositing at least one graphene layer (3) on the functional layer (2) by one or more graphene layer-depositing steps to form a layer system consisting of the functional layer (2) and the graphene layer (3), where a conductance of the functional layer (2) is below a conductance of the graphene layer (3). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor component. Silicon containing layer (1) Functional layer (2) Graphene layer (3) Layer system (6)