▎ 摘　　要

NOVELTY - A buffer layer of epitaxial gallium nitride (GaN) grapheme structure, comprises a silicon carbide substrate; a graphene-containing layer as buffer layer; a gallium nitride epitaxial layer (GaN layer); and nitride layer between the graphene layer and the GaN layer, where the graphene layer is grown on the silicon carbide substrate, where the structure of the epitaxial GaN from bottom to top in turn is linear, graphene layer, a nitride layer and a GaN layer. USE - As buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode (claimed). ADVANTAGE - The buffer layer of epitaxial gallium nitride (GaN) grapheme structure is low stress, high quality gallium nitride epitaxial layer that reduces the defective percentage of the LED device and improves the quality of the LED device and prolongs service life. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) preparing germanium nanometer needle structure, involving: preparing graphene thin layer on a substrate; a layer of nitride thin layer on the graphene layer; and growing GaN layer on the nitride layer using metal organic chemical vapor deposition method, where the growth rate is 5-6 mu /hours, the growing temperature is 900-1200 degrees C, the thickness of the GaN layer is 2-8 mu m, and the carrier gas is nitrogen and hydrogen mixed gas; and (2) a light emitting diode (LED) comprising the buffer layer of epitaxial gallium nitride (GaN) grapheme structure, an N-type GaN layer, InGaN/GaN multi-quantum well active region and a P-type AlGaN, where the p-type GaN, respectively preparing the P, N electrodes to obtain the GaN-based LED.