• 专利标题:   Sensor for detecting nitrogen oxide (NOx) gas, has gate electrode which is positioned on gate oxide region corresponding to region spaced apart between source electrode and drain electrode, and dual channel that includes graphene layer.
  • 专利号:   KR2021007096-A, KR2260165-B1
  • 发明人:   AN K, SEOG S, LIM J, MYUNG S, JUNG H K, LEE S S, BAE G
  • 专利权人:   KOREA RES INST CHEM TECHNOLOGY
  • 国际专利分类:   G01N027/12, G01N033/00, H01L029/40, H01L029/786
  • 专利详细信息:   KR2021007096-A 20 Jan 2021 G01N-027/12 202112 Pages: 14
  • 申请详细信息:   KR2021007096-A KR082938 10 Jul 2019
  • 优先权号:   KR082938

▎ 摘  要

NOVELTY - The sensor has a dual channel including a graphene layer and a metal oxide thin film positioned in contact with one surface of the graphene layer. A source electrode and a drain electrode are spaced apart from each other on the metal oxide thin film of the double channel. A gate oxide film is positioned in contact with the other surface of the graphene layer of the double channel. A gate electrode is positioned on a gate oxide region corresponding to a region spaced apart between the source electrode and the drain electrode. The gate voltage of the detection sensor-the drain current is a nitrogen oxide gas detection sensor having a Dirac point. The metal oxide of the metal oxide thin film is titanium (Ti), zinc (Zn), indium (In), tungsten (W), niobium (Nb), molybdenum (Mo), and magnesium (Mg), tin (Sn), strontium (Sr), yttrium (Y) and gallium (Ga) of the selected elements of oxides or complex oxides of nitrogen oxide gas detection sensor. USE - Sensor for detecting nitrogen oxide (NOx) gas. ADVANTAGE - The nitrogen oxide gas detection sensor has a dual channel structure of a graphene layer and a metal oxide thin film. The very trace amounts of nitrogen oxide gas are detected, while having excellent gas adsorption and desorption stability and sensitivity-very accurately and sensitively in real time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a nitrogen oxide gas detection sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view of the result of IV measurement of the zinc oxide-graphene composite thin film according to the thickness change of the zinc oxide thin film analyzed at room temperature, (b) oxidation according to the thickness change of the zinc oxide thin film analyzed at an operating temperature of 250 IV measurement result of the zinc-graphene composite thin film and (c) the measurement result of ohmic resistance value according to the change in operating temperature and thickness of the zinc oxide thin film.