• 专利标题:   Graphene-based layered molybdenum disulfide ferroelectric memory, has ferroelectric insulating layer provided with molybdenum disulfide channel layer which is provided with graphene source electrode and graphene drain electrode.
  • 专利号:   CN206236676-U
  • 发明人:   CAI W, LIU Y, TAN Q, WANG Q, YANG B, YANG Z, ZHANG F
  • 专利权人:   UNIV YUNNAN NORMAL
  • 国际专利分类:   H01L029/45, H01L029/51, H01L029/78
  • 专利详细信息:   CN206236676-U 09 Jun 2017 H01L-029/78 201747 Pages: 5 Chinese
  • 申请详细信息:   CN206236676-U CN21219934 14 Nov 2016
  • 优先权号:   CN21219934

▎ 摘  要

NOVELTY - The utility model belonging to the technical field of storage, specifically relates to a graphene-based electrode of layered molybdenum disulfide memory, comprising a grid electrode, bismuth ferrite ferroelectric insulating layer, molybdenum disulfide channel layer, graphene source electrode and a drain electrode, the gate electrode is provided with a bismuth ferrite ferroelectric insulating layer, bismuth ferrite ferroelectric insulating layer is provided with a molybdenum disulfide channel layer, molybdenum disulfide on the channel layer provided with a graphene source electrode and drain electrode. The utility model device has small size, high carrier mobility, large switch current ratio, device power consumption, strong fatigue resistance and maintaining performance.