▎ 摘　　要

NOVELTY - Growing a graphene film (30) on a non-catalyst surface involves applying a carbon source and a catalyst to the non-catalyst surface; and initiating the formation of the graphene film from the carbon source on the non-catalyst surface. USE - For forming graphene films (claimed) which are used as electrodes for optoelectronics applications, such as organic photovoltaics, organic light emitting devices, liquid crystal display devices, touch screens, heads-up displays, goggles, glasses and visors and smart window panes, and also in flexible solar cells and organic light emitting diodes (OLEDs), tunnel field-effect transistors, tunable laser diodes, electrical and optical sensors, and optoelectronic devices for generating, amplifying, and detecting infrared light. ADVANTAGE - Compared to existing methods, the present methods produce high-quality and uniform graphene films (e.g. graphene bilayers) directly on desired non-catalyst surfaces (e.g. insulating substrates) without the need for a transfer step. The present methods form bilayer graphene films that can cover up to 90-95% of a large surface area. The obtained graphene films have a low sheet resistance (e.g. 2000- 3000 Omega /square or 1000-5000 Omega /square), show ambipolar behavior, and have suitable bandgaps (i.e. 0-1 eV) and Bernal arrangements. DETAILED DESCRIPTION - Growing a graphene film on a non-catalyst surface (30) involves applying a carbon source and a catalyst to the non-catalyst surface; and initiating the formation of the graphene film from the carbon source on the non-catalyst surface. The non-catalyst surface is a non-metal substrate or an insulating substrate. The carbon source is applied to the non-catalyst surface by a process selected from thermal evaporation, spin-coating, spray coating, dip coating, drop casting, doctor-b lading, inkjet printing, gravure printing, screen printing and/or chemical vapor deposition. The catalyst is applied to the non-catalyst surface by a process selected from thermal evaporation, electron beam evaporation, sputtering, film pressing, film rolling, printing, ink-jet printing, gravure printing, compression and/or vacuum compression. The step of initiating graphene film formation involves induction heating. The graphene film is formed in the presence of an inert gas selected from H2, N2 and/or Ar. The graphene film is formed at 800-1100 degrees C. The formed graphene film is a bilayer. The method further involves separating the catalyst from the formed graphene film. A thickness of the graphene film is controlled by adjusting reaction conditions, where the reaction conditions are selected from carbon source type, carbon source concentration, carbon source thickness on the non-catalyst surface, inert gas flow rate, pressure, temperature, reaction time, reaction time at elevated temperatures, non-catalyst surface type and/or cooling rate DESCRIPTION OF DRAWING(S) - The figure shows an apparatus for forming graphene films. Apparatus (10) Hydrogen chamber (12) Argon chamber (14) Filters (13, 15 and 17) Tubing network (16) Quartz tube (20) Base member (22) Magnetic rod (24) Copper enclosure (28) Graphene film (30)