▎ 摘　　要

NOVELTY - The method involves forming carbon semiconductor layer on surface of fin portion (101). A graphene layer (301) is formed on surface of the semiconductor layer and is treated by surface repair process and defect of graphene layer is eliminated. An isolation layer (300) is formed on a portion of graphene layer. A gate structure (302) is formed on a surface (201b) of the graphene layer across the fin portion and is covered on the portion of the graphene layer on the top portion and side wall of the fin portion. The material of the semiconductor layer is silicon carbide. USE - Method of forming fin type FET (claimed). ADVANTAGE - The method can improve the performance of fin type FET. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a fine type FET. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the method of forming fin type FET. (Drawing includes non-English language text) Fin portion (101) Surface of graphene layer (201b) Isolation layer (300) Graphene layer (301) Gate structure (302)