▎ 摘　　要

NOVELTY - Two-dimensional material vertical p-n junction diode based on van der Waals contact, comprises metal top electrode, p-type two-dimensional material, n-type two-dimensional material and bottom electrode stacked vertically from top to bottom, where the materials of two adjacent layers form van der Waals contacts through van der Waals force and the adjacent two layers of material are adhered to each other without falling off. USE - The two-dimensional material vertical p-n junction diode based on van der Waals contact is useful in semiconductor device, preferably photo detectors, a light emitting diode or a rectifier (claimed). ADVANTAGE - The two-dimensional material is smooth without defects and lattice damage, avoids the damage to the lattice of two-dimensional materials caused by traditional evaporation methods, obviously reduces Schottky barrier and tunneling current caused by Fermi pinning, greatly improves the rectifying performance of the device, and solves the technical problem that the current two-dimensional material vertical p-n junction device has a Schottky barrier and a large tunneling current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of two-dimensional material vertical p-n junction diode.