• 专利标题:   Method for positioning and growing perovskite film, involves utilizing graphene-assisted method, transferring layer of graphene grown on target substrate and spin-coating photoresist, followed by positioning target region on graphene.
  • 专利号:   CN109087849-A
  • 发明人:   WU C, ZHONG W, DU R, GUI T, ZHU T, FENG Y, XIE C, LUO L
  • 专利权人:   UNIV HEFEI TECHNOLOGY
  • 国际专利分类:   H01L021/02, H01L031/0264, H01L031/18
  • 专利详细信息:   CN109087849-A 25 Dec 2018 H01L-021/02 201915 Pages: 8 Chinese
  • 申请详细信息:   CN109087849-A CN10884191 06 Aug 2018
  • 优先权号:   CN10884191

▎ 摘  要

NOVELTY - A perovskite film positioning and growing method involves utilizing graphene-assisted method, transferring a layer of graphene grown by chemical vapor deposition on the target substrate, spin-coating a photoresist and positioning a target region on the graphene to grow a perovskite film by UV exposure lithography. The target substrate is bombarded with oxygen plasma, followed by removing graphene in the target region, hydrophilizing the target region, removing the photoresist, spin coating the perovskite precursor solution and annealing to grow a perovskite film in the target region, removing the residual graphene and achieving the localized growth of the perovskite film. USE - Method for positioning and growing perovskite film. ADVANTAGE - The method enables realizing locating and growing the perovskite film on any substrate, with reduced requirement of hydrophobic substrate.