• 专利标题:   Method for controlling synthesis of high quality graphene by chlorination of two-dimensional carbide crystal involves introducing chlorine gas into two-dimensional carbide crystal at certain temperature, and obtaining graphene.
  • 专利号:   CN106744844-A
  • 发明人:   MU S, KOU Z, GUO B, MENG T
  • 专利权人:   UNIV WUHAN TECHNOLOGY
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN106744844-A 31 May 2017 C01B-032/184 201744 Pages: 24 Chinese
  • 申请详细信息:   CN106744844-A CN11208447 23 Dec 2016
  • 优先权号:   CN11208447

▎ 摘  要

NOVELTY - The method for controlling synthesis of high quality graphene by chlorination of two-dimensional carbide crystal involves introducing chlorine gas into two-dimensional carbide crystal at certain temperature, and obtaining graphene by etching reaction of chlorine gas with two-dimensional carbide. USE - Method for controlling synthesis of high quality graphene by chlorination of two-dimensional carbide crystal (claimed). ADVANTAGE - The method enables synthesis of high quality graphene with wide range of raw materials at low cost under mild conditions, and completely chlorinates two-dimensional carbides to graphene.