• 专利标题:   Graphene passivation layer manufacturing method for semiconductor device, involves producing pentacene steam, and evaporating pentacene steam on surface of graphene.
  • 专利号:   KR2011001621-A
  • 发明人:   GEUN JI H, NA HWANG H, DOK KIM Y, GUK HWANG C, HUI HAN J
  • 专利权人:   POSTECH ACAD IND FOUND
  • 国际专利分类:   H01L021/203
  • 专利详细信息:   KR2011001621-A 06 Jan 2011 H01L-021/203 201122 Pages: 9
  • 申请详细信息:   KR2011001621-A KR059213 30 Jun 2009
  • 优先权号:   KR059213

▎ 摘  要

NOVELTY - The method involves producing pentacene steam, and evaporating the pentacene steam on a surface of a semiconductor substrate. USE - Graphene passivation layer manufacturing method for a semiconductor device (claimed). ADVANTAGE - The method enables preventing the electrical property of the graphene from being changed with the external factor including air and water after removing a protective film. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a graphene passivation layer manufacturing method. '(Drawing includes non-English language text)'