• 专利标题:   Method for forming nanopores of two-dimensional material structure, involves forming nanopore in thickness direction with respect to structure.
  • 专利号:   KR2022079340-A
  • 发明人:   LEE J, HYE J M, LEE S H
  • 专利权人:   DAEGU GYEONGBUK INST SCI TECHNOLOGY
  • 国际专利分类:   H01J037/317, H01L021/02
  • 专利详细信息:   KR2022079340-A 13 Jun 2022 H01L-021/02 202257 Pages: 16
  • 申请详细信息:   KR2022079340-A KR169018 04 Dec 2020
  • 优先权号:   KR169018

▎ 摘  要

NOVELTY - Formation of nanopores of two-dimensional structure involves providing the two-dimensional material structure, and forming nanopores in a thickness direction with respect to the structure. USE - Formation of nanopores of two-dimensional structure such as single structure, double junction structure, and multi-junction structure (all claimed). ADVANTAGE - The surface area for excellent light absorption is increased by forming certain nanopores in a two-dimensional material using a nanopatterning technique. The shape of an indirect bandgap is changed into a shape of a direct bandgap, so that the exciton survival time is increased. The fast recombination rate is controlled due to the large exciton binding energy of the 2D material.